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10.06.2013
DDR3 is the current mainstream DRAM technology standardized by JEDEC, bringing further improvements in power consumption and increased bandwidth over DDR2. Registered ECC MiniDIMM DDR3 is available in Standard Profile or Very Low Profile with data rates from 800 to 1600 Mega-Transfers per Second. DDR3 has been the de facto mainstream memory technology, especially for server and notebook applications, since 2010. Many other applications exist in the market today to take advantage of the superior performance features of DDR3.
The benefits from DDR3 technology such as increased bandwidth, performance and density and reduced total power consumption are key elements of the next generation of embedded systems. 244-pin Mini-RDIMM is a unique product mainly installed in customized applications such as networking systems, routers and hubs that are used in mission critical or 24/7 data intensive operations.
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Standard Profile (1.181") with Nominal Voltage (1.5V) |
Part Number |
WD3NE9wwwxxyzs |
Data Rate |
800 MT/s, 1066 MT/s, 1333 MT/s, 1600 MT/s |
Density |
1GB - 8GB |
Rank |
1-Rank |
DIMM Configuration |
128x72, 256x72, 512x72 |
Component Configuration |
128Mx8, 256Mx8, 512Mx8 |
Voltage |
1.5V |
Very Low Profile (0.74") with Nominal Voltage (1.5V) |
Part Number |
WD3NEV9wwwxxyzs |
Data Rate |
800 MT/s, 1066 MT/s, 1333 MT/s, 1600 MT/s |
Density |
1GB - 8GB |
Rank |
1-Rank |
DIMM Configuration |
128x72, 256x72, 512x72 |
Component Configuration |
128Mx8, 256Mx8, 512Mx8 |
Voltage |
1.5V |
(www) : |
Module Density
(0)1G = 1GB |
(0)8G = 8GB |
(0)2G = 2GB |
(1)6G = 16GB |
(0)4G = 4GB |
3(2)G = 32GB |
For VLP DIMM (0)(1)(2) will be ignored. |
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(xx): |
Module Speed
80 = 800Mbs @ CL6 |
16 = 1600Mbs @ CL11 |
10 = 1066Mbs @ CL7 |
18 = 1866Mbs @ CL13 |
13 = 1333Mbs @ CL9 |
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(y): |
Module Latency (For Unbuffered / Overclocked Modules only) |
I = CL6 |
N = CL11 |
J = CL7 |
P = CL13 |
L = CL9 |
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Latency will be specified only on non-register (No Buffer) DIMMs |
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Register Vendor (For Registered Modules only)
I = Inphi |
D = IDT |
M = Montage |
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(z): |
DRAM Manufacturer
S = Samsung |
H = Hynix |
M = Micron |
E = Elpida |
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(s): |
Die Revision
M = M-Die |
C = C-Die |
A = A-Die |
D = D-Die |
B = B-Die |
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